IRGB4059DPbF transistor equivalent, insulated gate bipolar transistor.
* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175 °C
* 5µs SCSOA
* Square RBSOA
* 100% of The Parts .
* Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
* Rugged Trans.
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